Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 359-367
doi:10.1351/pac200274030359
Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices*
Pere Roca i Cabarrocas, Anna Fontcuberta i Morral, Sarra Lebib, and Yves Poissant
Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS) Ecole Polytechnique, 91128 Palaiseau Cedex, France
Abstract:
Powder formation in silane plasmas has been considered as a technology drawback because it might lead to the formation of macroscopic defects in the deposited layers. Here we summarize our recent efforts in controlling the formation of powder precursors, in particular, nanocrystalline silicon particles, aiming at their incorporation in the films. Indeed, the incorporation of clusters and crystallites along with SiHx radicals allows production of polymorphous silicon films with improved structure and transport properties with respect to standard amorphous silicon films.
All articles from the 15th International Symposium on Plasma Chemistry, Orléans, France, 9–13 July 2001.