Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 401-405
doi:10.1351/pac200274030401
Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas*
Christine Charles
Plasma Research Laboratory, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
Abstract:
Good-quality silicon dioxide films have been deposited at low temperature (200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.
All articles from the 15th International Symposium on Plasma Chemistry, Orléans, France, 9–13 July 2001.