Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 419-422
doi:10.1351/pac200274030419
Ion-induced damage and annealing of silicon. Molecular dynamics simulations*
David Humbird and David B. Graves
University of California at Berkeley, Berkeley, CA 94720, USA
Abstract:
A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.
All articles from the 15th International Symposium on Plasma Chemistry, Orléans, France, 9–13 July 2001.