Pure and Applied Chemistry, 2002, Volume 74, No. 3, pp. 419-422, Cited by

Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 419-422

http://dx.doi.org/10.1351/pac200274030419

Ion-induced damage and annealing of silicon. Molecular dynamics simulations

David Humbird and David B. Graves

University of California at Berkeley, Berkeley, CA 94720, USA

Krzeminski C., Brulin Q., Cuny V., Lecat E., Lampin E., Cleri F.: Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential. J Appl Phys 2007, 101, 123506. <http://dx.doi.org/10.1063/1.2743089>
Humbird David, Graves David B., Stevens A. A. E., Kessels W. M. M.: Molecular dynamics simulations of Ar[sup +] bombardment of Si with comparison to experiment. J Vac Sci Technol A 2007, 25, 1529. <http://dx.doi.org/10.1116/1.2787713>
Gielis J., Gevers P., Stevens A., Beijerinck H., van de Sanden M., Kessels W.: Spectroscopic second-harmonic generation during Ar+-ion bombardment of Si(100). Phys Rev B 2006, 74, 165311. <http://dx.doi.org/10.1103/PhysRevB.74.165311>
Stevens A. A. E., Kessels W. M. M., van de Sanden M. C. M., Beijerinck H. C. W.: Amorphous silicon layer characteristics during 70–2000 eV Ar[sup +]-ion bombardment of Si(100). J Vac Sci Technol A 2006, 24, 1933. <http://dx.doi.org/10.1116/1.2244535>
Wang Xinwei, Lu Yongfeng: Solidification and epitaxial regrowth in surface nanostructuring with laser-assisted scanning tunneling microscope. J Appl Phys 2005, 98, 114304. <http://dx.doi.org/10.1063/1.2135416>
Humbird David, Graves David B.: Atomistic simulations of Ar[sup +]-ion-assisted etching of silicon by fluorine and chlorine. J Vac Sci Technol A 2005, 23, 31. <http://dx.doi.org/10.1116/1.1814106>