Preparation of II-VI group semiconductor nanowire arrays
by dc electrochemical deposition in porous aluminum oxide templates
Dongsheng Xu, Dapeng Chen, Yajie Xu, Xuesong Shi, Guolin
Guo, Linlin Gui, and Youqi Tang
Institute of Physical Chemistry, Peking
University, Beijing 100871, P. R. China
Abstract: II-VI group compound semiconductors such
as CdS, CdSe, and CdTe nanowire arrays have been prepared by direct
current electrodeposition in porous anodic aluminum oxide template from
nonaqueous electrolyte. SEM and TEM results show that these nanowires
have a highly anisotropic structure of aligned nanowires with diameters
of 15-200 nm, which are consistent with the diameters of the templates
used. Electron diffraction and HREM investigations demonstrate that
the crystalline structures of these nanowires are uniform hexagonal
single crystal. This approach can be used to fabricate single crystal
nanowire arrays of a wide range of semiconductors and other materials.