Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 419-422
Ion-induced damage and annealing of silicon. Molecular dynamics simulations
Abstract: A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.