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Pure Appl. Chem., 2002, Vol. 74, No. 3, pp. 419-422

http://dx.doi.org/10.1351/pac200274030419

Ion-induced damage and annealing of silicon. Molecular dynamics simulations

David Humbird and David B. Graves

University of California at Berkeley, Berkeley, CA 94720, USA

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  • Rozenak Paul: Lattice Defects Diffuse Scattering from Thin Films of a Ge-Si System with Low-Energy Ar+ and Xe+ Bombardment During Molecular Beam Epitaxy (MBE) Growth. Metall and Mat Trans A 2013, 44, 102. <http://dx.doi.org/10.1007/s11661-012-1448-2>
  • Mekkakia-Maaza N, Dussart R, Tillocher T, Lefaucheux P, Ranson P: A novel amorphization–etch alternating process for Si(1 0 0). J. Micromech. Microeng. 2013, 23, 045023. <http://dx.doi.org/10.1088/0960-1317/23/4/045023>
  • Galli Federico, Mamunuru Meenakshi, Kortshagen Uwe R: The energy distribution function of ions impinging on nanoparticles in a collisional low-pressure plasma. Plasma Sources Sci Technol 2012, 21, 035002. <http://dx.doi.org/10.1088/0963-0252/21/3/035002>
  • Krzeminski C., Brulin Q., Cuny V., Lecat E., Lampin E., Cleri F.: Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential. J Appl Phys 2007, 101, 123506. <http://dx.doi.org/10.1063/1.2743089>
  • Humbird David, Graves David B., Stevens A. A. E., Kessels W. M. M.: Molecular dynamics simulations of Ar[sup +] bombardment of Si with comparison to experiment. J Vac Sci Technol A 2007, 25, 1529. <http://dx.doi.org/10.1116/1.2787713>
  • Gielis J., Gevers P., Stevens A., Beijerinck H., van de Sanden M., Kessels W.: Spectroscopic second-harmonic generation during Ar+-ion bombardment of Si(100). Phys Rev B 2006, 74, 165311. <http://dx.doi.org/10.1103/PhysRevB.74.165311>
  • Stevens A. A. E., Kessels W. M. M., van de Sanden M. C. M., Beijerinck H. C. W.: Amorphous silicon layer characteristics during 70–2000 eV Ar[sup +]-ion bombardment of Si(100). J Vac Sci Technol A 2006, 24, 1933. <http://dx.doi.org/10.1116/1.2244535>
  • Wang Xinwei, Lu Yongfeng: Solidification and epitaxial regrowth in surface nanostructuring with laser-assisted scanning tunneling microscope. J Appl Phys 2005, 98, 114304. <http://dx.doi.org/10.1063/1.2135416>
  • Humbird David, Graves David B.: Atomistic simulations of Ar[sup +]-ion-assisted etching of silicon by fluorine and chlorine. J Vac Sci Technol A 2005, 23, 31. <http://dx.doi.org/10.1116/1.1814106>